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IEDM 2018
Dec 1, 2018 - Dec 6, 2018



Two special MRAM-related events at IEDM 2018 (1-5 Dec 2018)

organized by the IEEE Magnetics Society:


1) A special poster session dedicated to MRAM

(5 Dec 2018, 2pm-5pm, Plaza Room)


2) The 10th MRAM Global Innovation Forum

(6 Dec 2018, 8:45am-5:30pm, Golden Gate 2-5)

 IEDM is the main annual conference of the IEEE Electron Devices Society (1-5 December 2018, Hilton Union Square, San-Francisco). With the rising interest of the microelectronics industry in STT-MRAM, it is very important to strengthen the relationship between the microelectronics and magnetism communities in order to accelerate the development of this new hybrid technology. For that, two special events related to MRAM technology are being organized around IEDM.

1) A special poster session entirely dedicated to MRAM (5 Dec, 2pm-5pm, Plaza room) (MRAM materials/phenomena/ technology/testing, hybrid CMOS/MTJ technology and circuits, spin-logic).  Similar MRAM poster sessions took place at IEDM 2016 and IEDM 2017 which were very successful with 33 posters presented and very active cross-disciplinary discussions. This session is technically organized by the IEEE Magnetics Society and will be embedded in the IEDM 2018 conference. This event will be a great opportunity to bring together experts in magnetism and in microelectronics. This year, 32 posters were selected for presentation. Participants to this poster session will have to register at IEDM as regular attendees. The list of posters can be downloaded from the following links:

-List of accepted posters

-List of accepted posters with abstracts



2) The 10th MRAM Global Innovation Forum (Hilton Union Square, Golden Gate 2-5, 6 Dec 2018)

This is a one-day forum organized the day following IEDM (i.e on 6 December 2018, 8:45am - 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O'Farrell St, San Francisco). The Forum will consist of 10 invited talks from leading experts and a panel discussion.  Last year, the 9th edition of this Forum gathered 280 attendees. Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, spin orbit torque MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this Forum marks the 10th edition of the series.

The Forum is entirely sponsored by Samsung Semiconductor so that registration to the Forum is free of charge. However the number of attendees is limited. To register to the Forum, send an email to"> with first name, last name, contact email, affiliation. A confirmation email will be sent to you. The deadline for registering to the Forum is 10th November 2018.

The Forum program is as follows:

Bernard DIENY and Bruce TERRIS