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Event 

Title:
IEDM 2018
When:
Dec 1, 2018 - Dec 6, 2018
Category:
Conferences

Description

 

Two special MRAM-related events at IEDM 2018 (1-5 Dec 2018)

organized by the IEEE Magnetics Society:

1) A special poster session dedicated to MRAM

2) The 10th MRAM Global Innovation Forum (6 Dec 2018)

IEDM is the main annual conference of the IEEE Electron Devices Society (1-5 December 2018, Hilton Union Square, San-Francisco). With the rising interest of the microelectronics industry in STT-MRAM, it is very important to strengthen the relationship between the microelectronics and magnetism communities in order to accelerate the development of this new hybrid technology. For that, two special events related to MRAM technology are being organized around IEDM.

1) A special poster session entirely dedicated to MRAM (MRAM materials/phenomena/ technology/testing, hybrid CMOS/MTJ technology and circuits, spin-logic).  Similar MRAM poster sessions took place at IEDM 2016 and IEDM 2017 which were very successful with 33 posters presented and very active cross-disciplinary discussions. This session is technically organized by the IEEE Magnetics Society and will be embedded in the IEDM 2018 conference. This event will be a great opportunity to bring together experts in magnetism and in microelectronics. . It will appear as a special memory session in the IEDM program. This event will be a great opportunity for spintronics students, researchers and engineers to meet colleagues from microelectronics community. We strongly encourage teams from magnetism community working on MRAM to send attendees to IEDM and present posters related to MRAM, spintronics circuits or spin logic during this special poster session. The posters will be selected by a small international program committee formed by members of the IEEE Magnetics Society. There will be no publications associated with these posters in the Proceedings of IEDM. Of course, any presenting author can also submit regular digests for oral presentations following the usual procedure of IEDM organization (see http://ieee-iedm.org/). The session will also be used to advertise our Society and our main conferences: INTERMAG and MMM, within the microelectronics community.

If you want to present a poster during the MRAM poster session at IEDM 2018, send a half page abstract to bernard.dieny@cea.fr before 28 September 2018. In the list of authors, underline who will be the presenting author. The notice of acceptance/rejection will be sent by mid-October. Participants to this poster session will have to register at IEDM as regular attendees.

2) The 10th MRAM Global Innovation Forum (Hilton Union Square, 6 Dec 2018)

This is a one-day forum organized the day following IEDM (i.e on 6 December 2018, 8:45am - 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O'Farrell St, San Francisco). The Forum will consist of 10 invited talks from leading experts and a panel discussion. Last year, the 9th edition of this Forum gathered 280 attendees. Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, spin orbit torque MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this Forum marks the 10th edition of the series.

The Forum is entirely sponsored by Samsung Semiconductor so that registration to the Forum is free of charge, including free lunch. However the number of attendees is limited. To register to the Forum, send an email to bernard.dieny@cea.fr with first name, last name, contact email, affiliation. A confirmation email will be sent to you. The deadline for registering to the Forum is 10th November 2018.

We strongly encourage teams from magnetism community working on MRAM to send attendees to IEDM and attend these two events.

Bernard DIENY and Bruce TERRIS