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Two special MRAM-related events at IEDM 2019 #
Dec 11, 2019 - Dec 12, 2019



Two special MRAM-related events at IEDM 2019 (9-11 Dec 2019)

organized by the IEEE Magnetics Society:


1) A special poster session dedicated to MRAM

(11 Dec 2019, 9am-Noon, YOSEMITE Ballroom)


2) The 11th MRAM Global Innovation Forum

(12 Dec 2019, 8:45am-5:30pm, IMPERIAL Ballroom)

 IEDM is the main annual conference of the IEEE Electron Devices Society (9-11 December 2019, Hilton Union Square, San-Francisco). With the rising interest of the microelectronics industry in STT-MRAM, it is very important to strengthen the relationship between the microelectronics and magnetism communities in order to accelerate the development of this new hybrid technology. For that, two special events related to MRAM technology are being organized around IEDM by the IEEE Magnetics Society with the particular help of the program committee formed of D.Worledge (Program chair), B.Dieny (General chair), L.Thomas, K.J.Lee, S.Fukami, J.Katine, K.Gao and of P.Mahoney and J.A.Incorvia for the logistics.

1) A special poster session entirely dedicated to MRAM (11 Dec 2019, 9am-Noon, YOSEMITE Ballroom)

Various topics will be covered including MRAM materials, phenomena, technology, testing, hybrid CMOS/MTJ technology and circuits, spin-logic.  Similar MRAM poster sessions took place at IEDM 2016, IEDM2017 and IEDM 2018 which were very successful with more than 30 posters presented and very active cross-disciplinary discussions. This year, 30 posters were accepted for presentation. This session is technically organized by the IEEE Magnetics Society. This event is a great opportunity to bring together experts in magnetism and in microelectronics. Participants in this poster session need to register at IEDM as regular attendees. The list of posters can be downloaded from the following links:

-List of accepted posters

-List of accepted posters with abstracts

2) The 11th MRAM Global Innovation Forum

(12 Dec 2019, 8:45am-5:30pm, Hilton Union Square, IMPERIAL Ballroom)

This is a one-day forum organized the day following IEDM (i.e on 12 December 2019, 8:45am – 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O’Farrell St, San Francisco). The Forum will consist of 10 invited talks from leading experts and a panel discussion on “MRAM for AI”.  Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, spin orbit torque MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 11th edition of the series.

The Forum is entirely supported by Samsung Semiconductor and IEEE Magnetics Society. The registration to the Forum is free of charge. To register to the Forum, send an email to with first name, last name, contact email, affiliation. A confirmation email will be sent to you. The deadline for registering to the Forum is 15th November 2019. The Forum program is as follows:

2012 dist_lect_composite

For more information about the event, see the two attached files here: 2019.MRAM_1.pdf, and 2019.MRAM_1.pdf