IEEE Daniel E. Noble Award for Emerging Technologies
Contact: Awards Committee Chairman
Excerpted from the remarks of IEEE Division IV Director Ed Della Torre, who presented the award:
The IEEE Daniel E. Noble Award is sponsored by the Motorola Foundation and recognizes outstanding contributions to emerging technologies recognized within recent years.
[This award honors] James Daughton, Stuart Parkin, and Saied Tehrani. They are being recognized “for fundamental contributions to the development of magneto-resistive devices for non-volatile, high density, random access memory.”
Drs. Daughton, Parkin and Tehrani each made key contributions to Magneto-Resistive Random Access Memory (MRAM) technology. MRAM is an integrated-circuit access memory fabricated with nanotechnology. Using an electron spin to store data, it has the capability to combine many of the best attributes of different types of semiconductor memories.
Information and Nominations
Please visit the following link for more information and to make nominations:
http://www.ieee.org/about/awards/tfas/noble.html
Recipients
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James Daughton retired from NVE Corporation, Eden Prairie, MN in 2006, a company he founded in 1989. He served his last five years with the company as its chief technology officer, after serving as chief executive officer. An IEEE Life Fellow, Dr. Daughton received bachelor’s, master’s, and doctorate degrees in electrical engineering from Iowa State University. |
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Stuart Parkin is an IBM Fellow at the IBM Almaden Research Center, San Jose, California, where he manages the magnetoelectrics group, directs the IBM-Stanford Spintronic Science and Applications Center, and serves as a consulting professor at Stanford University. He received a bachelor’s, masters, and doctorate from the Cavendish Laboratory, Cambridge, all in physics.> |
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Saied Tehrani is Director of Analog and Mixed Signal Technologies at Freescale Semiconductor (formerly the semiconductor division of Motorola, Inc.). His R&D team is responsible for the development of power, analog, RF, sensor, and MRAM technologies. He received a bachelor’s from the University of North Carolina, Charlotte, and a masters and doctorate in electrical engineering from the University of Florida, Gainesville. |