Atsufumi Hirohata

Atsufumi Hirohata

Affiliation
University of York
IEEE Region
Region 08 (Africa, Europe, Middle East)
(
Country
GB
)
Email

Atsufumi Hirohata joined the Department of Electronic Engineering in September 2007. He has over 15 years of experience in spintronics, ranging from magnetic-domain imaging to spin-current interference. He is currently an editorial board member of Journal of Physics D and Spin. He is also a member of both the Administrative and Technical Committees of the IEEE Magnetics Society. He holds a visiting associate professorship at Tohoku University and a Royal Society Industry Fellowship in collaboration with Hitachi Cambridge Laboratory.

Before coming to York, he was a researcher at RIKEN, a Japanese governmental research institute, for over two years, where he designed a spin-current interference device, which can be used as a spin operation in a spintronic three-terminal transistor. He was before working as a postdoctoral researcher at Tohoku University, and successfully fabricated a perfectly ordered epitaxial full-Heusler alloy films, which was the first report to their knowledge and was acknowledged by several awards. He also worked as a postdoctoral associate at Massachusetts Institute of Technology, where he demonstrated basic function of a phase-change memory, which has been recently released in a market by Intel. He received his PhD in Physics at the University of Cambridge in 2001 and then served as a research associate at the Cavendish Laboratory in order to complete his study on spin detection of optically pumped spin-polarised electrons in a semiconductor using ferromagnetic overlayers, which attracted great interest, resulting in a few invited talks and papers. He originally graduated from Keio University with his BSc and MSc studies in Physics.

His present research interests include fabrication of a spin operator and nano-spin motor as well as growth of a half-metallic film.