Atsufumi Hirohata

Atsufumi Hirohata

University of York
IEEE Region
Region 08 (Africa, Europe, Middle East)

Atsufumi Hirohata joined the Department of Electronic Engineering in September 2007. He has over 15 years of experience in spintronics, ranging from magnetic-domain imaging to spin-current interference. He is currently an editorial board member of Journal of Physics D and Spin. He is also a member of both the Administrative and Technical Committees of the IEEE Magnetics Society. He holds a visiting associate professorship at Tohoku University and a Royal Society Industry Fellowship in collaboration with Hitachi Cambridge Laboratory.

Before coming to York, he was a researcher at RIKEN, a Japanese governmental research institute, for over two years, where he designed a spin-current interference device, which can be used as a spin operation in a spintronic three-terminal transistor. He was before working as a postdoctoral researcher at Tohoku University, and successfully fabricated a perfectly ordered epitaxial full-Heusler alloy films, which was the first report to their knowledge and was acknowledged by several awards. He also worked as a postdoctoral associate at Massachusetts Institute of Technology, where he demonstrated basic function of a phase-change memory, which has been recently released in a market by Intel. He received his PhD in Physics at the University of Cambridge in 2001 and then served as a research associate at the Cavendish Laboratory in order to complete his study on spin detection of optically pumped spin-polarised electrons in a semiconductor using ferromagnetic overlayers, which attracted great interest, resulting in a few invited talks and papers. He originally graduated from Keio University with his BSc and MSc studies in Physics.

His present research interests include fabrication of a spin operator and nano-spin motor as well as growth of a half-metallic film.

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