With the rising interest of the microelectronics industry for STT-MRAM, it is very important to strengthen the relationship between the microelectronics and magnetism communities since this technology requires expertizes from both areas. Along this line, two special events related to MRAM technology are being organized around IEDM 2022 (3-7 December 2022) by the IEEE Magnetics Society. IEDM is the main annual conference of the IEEE Electron Devices Society. These events will be organized in-person.
1) A special poster session during IEDM dedicated to MRAM
This event will take place in Exhibit Hall (Yosemite) on Tuesday December 6, 2:20 to 5:30 pm.
Various topics will be covered including MRAM materials, phenomena, technology, testing, hybrid CMOS/MTJ technology and circuits, spin-logic. This session is technically organized by the IEEE Magnetics Society. It will appear as a special MRAM poster session embedded in the IEDM conference.
Abstracts: Poster Program
2) The 14th MRAM Global Innovation Forum (Hilton Union Square), 8 Dec 2022
This is a one-day forum organized the day following IEDM (i.e on 8 December 2022, 8:45am – 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O’Farrell St, San Francisco). The Forum will consist of 11 invited talks from leading experts and a panel discussion (see below). Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, SOT-MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 14th edition of the series.
Abstracts: MRAM Forum Program
Kevin GARELLO, Luc THOMAS, Bernard DIENY
Program committee: Luc Thomas, Daniel Worledge, Jordan Katine, Jack Guedj, Jean-Anne Incorvia, Kyung-Jin Lee, Shunsuke Fukami, Kevin Garello and Bernard Dieny